Measurement of proton induced radiation damage to CMOS transistors and p-i-n diodes

Author

Ziock, H.J. ; Hoffman, C.M. ; Holtkamp, D. ; Kinnison, W.W. ; Milner, C. ; Sommer, W.F. ; Bacigalupi, J. ; Cartiglia, N. ; DeWitt, J. ; Kaluzniacki, A. ; Kolanoski, H. ; Pitzl, D. ; Rowe, W.A. ; Sadrozinski, H.F.-W. ; Spencer, E. ; Tenenbaum, P. ; Ferguso

Author_Institution

Los Alamos Nat. Lab., NM, USA

Volume

37

Issue

3

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

1238

Lastpage

1241

Abstract

As part of a program to develop a silicon tracking device for the Superconducting Super Collider (SSC), radiation-hard CMOS transistors and p-i-n diodes have been exposed to the 800-MeV LAMPF (Los Alamos Meson Physics Facility) proton beam. The fluences accumulated in one week corresponded to the expected radiation levels of about ten SSC years. The leakage current constants for p-i-n diodes and threshold voltage shifts for CMOS transistors are determined under different biasing conditions. The results are presented and examined in detail

Keywords

CMOS integrated circuits; leakage currents; nuclear electronics; p-i-n diodes; proton effects; radiation hardening (electronics); 1 wk; 800 MeV; CMOS transistors; SSC; Superconducting Super Collider; biasing; leakage current constants; p-i-n diodes; proton induced radiation damage; proton irradiation; radiation hardening; threshold voltage shifts; CMOS technology; Neutrons; P-i-n diodes; Particle tracking; Protons; Radiation detectors; Silicon radiation detectors; Testing; Threshold voltage; Very large scale integration;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.57372

Filename

57372