Highly Reliable Integrated Gate Driver Circuit for Large TFT-LCD Applications

Author

Lin, Chih-Lung ; Cheng, Mao-Hsun ; Tu, Chun-Da ; Chuang, Min-Chin

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

33

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

679

Lastpage

681

Abstract

This letter presents a novel integrated hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit using ac driving (33% duty) to prevent the floating of row lines and reduce the bias voltage of pull-down TFTs to suppress the threshold voltage (V_TH) shift of a-Si:H TFTs. The V_TH shift of the TFTs in this design is reduced by 49.93% from that achieved using the 25%-duty ac-driving structure. In a reliability test, the new circuit operates stably at a high temperature (T = 60°C) for more than 240 h.

Keywords

amorphous semiconductors; driver circuits; liquid crystal displays; semiconductor device reliability; silicon; thin film transistors; AC driving; TFT-LCD application; VTH shift; bias voltage; hydrogenated amorphous silicon TFT; integrated gate driver circuit; pull-down TFT; reliability testing; temperature 60 C; thin-film transistor; threshold voltage; Clocks; Driver circuits; Logic gates; Reliability; Stress; Thin film transistors; Threshold voltage; AC driving; gate driver circuit; reliability test; threshold voltage shift;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2188269

Filename

6174436