Improved Switching Variability and Stability by Activating a Single Conductive Filament

Author

Park, Jubong ; Jung, Seungjae ; Lee, Wootae ; Kim, Seonghyun ; Shin, Jungho ; Lee, Daeseok ; Woo, Jiyong ; Hwang, Hyunsang

Author_Institution

Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

Volume

33

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

646

Lastpage

648

Abstract

We successfully fabricated a single-filament-activated resistive memory having limited conductive filament (CF) source through a novel fabrication technique. The formation of a single filament was confirmed using conductive atomic force microscopy. Compared to conventional programmable metallization cell devices having an unlimited CF source, our single-filament device showed a significantly improved switching variability by minimizing the probability of randomly formed CFs. The elimination of unlimited CF sources changed the rate-limiting parameter that determines the retention and disturbance properties and improved thermal and electrical stability.

Keywords

atomic force microscopy; electrical conductivity; electrical resistivity; metallisation; probability; random-access storage; conductive atomic force microscopy; conductive filament source; conventional programmable metallization cell devices; disturbance property; electrical stability; fabrication technique; probability; randomly formed CF; rate-limiting parameter; single conductive filament; single-filament device; single-filament-activated resistive memory; switching stability; switching variability; thermal stability; unlimited CF sources; Copper; Electron devices; Hafnium compounds; Ions; Switches; Switching circuits; Thermal stability; RRAM; Resistive memory (ReRAM); single filament; stability; uniformity; variability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2188373

Filename

6174438