Title :
Conduction type control of Si-doped GaAs on
Author :
Takamori, Toshi ; Watanabe, K. ; Fukunaga, T.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
4/25/1991 12:00:00 AM
Abstract :
It is shown that the conduction type of MBE grown Si-doped GaAs on
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; 600 C; GaAs:Si; MBE; V/III flux ratio; carrier compensation; conduction type control; electron concentration; growth temperature; p to n-type conversion; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910453
