Application of X-rays to nanolithography

Author

Cerrina, Franco

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

Volume

85

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

644

Lastpage

651

Abstract

The development of a successful fabrication process for electron devices with dimensions in the sub-100-nm domain will require a form of a high-resolution and high-volume patterning. In this paper we discuss the extensibility of X-ray lithography to this domain in terms of the resolution of the technique, considering in detail the effect of diffraction and photoelectrons. We show that optimized masks and exposure systems can deliver with relative ease patterning in the 70-50-nm region, while phase-shifting techniques can extend the resolution to sub-40 nm. High volume is provided by the use of the mask. The challenge remains in the fabrication of the IX mask, and in the achievement of the necessary placement accuracy

Keywords

X-ray lithography; X-ray masks; nanotechnology; phase shifting masks; 100 nm; IX mask; X-ray lithography; diffraction; electron device fabrication; exposure system; high-volume patterning; nanolithography; optimization; phase-shifting technique; photoelectrons; placement accuracy; resolution; Fabrication; Image resolution; Manufacturing; Nanolithography; Optical imaging; Resists; Robustness; Throughput; X-ray diffraction; X-ray lithography;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.573753

Filename

573753