Performance limiting surface defects in SiC epitaxial p-n junction diodes

Author

Kimoto, Tsunenobu ; Miyamoto, Nao ; Matsunami, Hiroyuki

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan

Volume

46

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

471

Lastpage

477

Abstract

Effects of surface defects on performance of kV-class 4H- and 6H-SiC epitaxial p-n junction diodes were investigated. The perimeter recombination and generation, instead of the bulk process, are responsible for forward recombination current and reverse leakage current of the diodes, respectively. Mapping studies of surface morphological defects have revealed that triangular-shaped defects severely degrade high-blocking capability of the diodes whereas shallow round pits and scratch give no direct impact. Device-killing defects in SiC epilayers are discussed based on breakdown voltage mapping. Effective minority carrier lifetimes are mainly limited not by bulk recombination but by perimeter recombination

Keywords

carrier lifetime; minority carriers; p-n junctions; power semiconductor diodes; semiconductor device breakdown; semiconductor epitaxial layers; semiconductor materials; silicon compounds; surface recombination; 4H-SiC; 6H-SiC; SiC; SiC epitaxial p-n junction diode; breakdown voltage mapping; forward recombination current; high power device; minority carrier lifetime; perimeter generation; perimeter recombination; reverse leakage current; surface defect; Charge carrier lifetime; Current measurement; Degradation; Diodes; Epitaxial growth; Leakage current; P-n junctions; Silicon carbide; Substrates; Surface morphology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.748864

Filename

748864