Title :
Current-controlled negative resistance (CCNR) in SiC P-i-N rectifiers
Author :
Ramungul, Nudjarin ; Chow, T. Paul
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
3/1/1999 12:00:00 AM
Abstract :
This paper presents an experimental demonstration of a current-controlled negative resistance (CCNR) in the forward characteristics of 6H-SiC P-i-N rectifiers. These forward characteristics indicate that the poor electrical performance of SiC diodes arises because conductivity modulation is not yet established. The cause of this behavior appears to be high defect densities and low minority carrier lifetime in the lightly doped drift region. N+ P junctions exhibit excellent forward characteristics with forward drop of 2.8 V at 100 A/cm2 and 3.9 V at 1000 A/cm2 without entering the CCNR mode when traps have been filled prior to the measurement
Keywords :
carrier lifetime; minority carriers; negative resistance; p-i-n diodes; power semiconductor diodes; semiconductor device models; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 2.8 to 3.9 V; 6H-SiC; N+P junctions; SiC; SiC P-i-N rectifiers; conductivity modulation; current-controlled negative resistance; forward characteristics; high defect densities; lightly doped drift region; low minority carrier lifetime; Charge carrier lifetime; Conductivity; Current density; Manufacturing industries; P-i-n diodes; PIN photodiodes; Rectifiers; Silicon carbide; Subcontracting; Thyristors;
Journal_Title :
Electron Devices, IEEE Transactions on
