Title :
Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC
Author :
Mathur, M.M. ; Cooper, James A., Jr.
Author_Institution :
Hewlett Packard Inc., San Jose, CA, USA
fDate :
3/1/1999 12:00:00 AM
Abstract :
Time-dependent-dielectric-breakdown (TDDB) measurements are reported on n-type 6H-SiC MOS capacitors formed by thermal oxidation. Failure distributions are obtained at 145, 240, and 305°C, and intrinsic mean-time-to-failure (MTTF) is plotted as a function of oxide field at each temperature. The results indicate that oxide reliability will not be a significant limitation to MOS-based power switching devices at temperatures up to 150°C. However, long-term operation of SiC MOS devices at temperatures higher than 250°C may not be practical
Keywords :
MOS capacitors; failure analysis; high-temperature electronics; oxidation; power semiconductor switches; semiconductor device breakdown; semiconductor device reliability; silicon compounds; wide band gap semiconductors; 145 to 305 C; MOS capacitor; SiC; failure distribution; high temperature operation; mean-time-to-failure; n-type 6H-SiC; power switching device; reliability; thermal oxide; time dependent dielectric breakdown; Argon; Doping; MOS capacitors; MOS devices; Oxidation; Photonic band gap; Power semiconductor switches; Silicon carbide; Substrates; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
