DocumentCode :
1478159
Title :
LPE growth of RE123 crystals from NiO saturated solution
Author :
Izumi, T. ; Xin Yao ; Hobara, N. ; Kakimoto, K. ; Hasegawa, Kiyotomo ; Nakamura, Yoshihiko ; Izumi, T. ; Shiohara, Y.
Author_Institution :
Supercond. Res. Lab., ISTEC, Tokyo, Japan
Volume :
11
Issue :
1
fYear :
2001
fDate :
3/1/2001 12:00:00 AM
Firstpage :
3481
Lastpage :
3484
Abstract :
We tried to apply NiO materials as a buffer layer for LPE (Liquid Phase Epitaxy) coated conductors with Ni substrate. We confirmed that NiO could suppress the reaction between NiO/Ni substrate and solution saturated with NiO. On the other hand, NiO addition to the solution decreased the peritectic temperature of the Y123 and increased the crystallization temperature of the Ba-Cu-Ni-O compound. This makes it difficult to grow the Y123 crystal from the NiO saturated solution. Instead of Y123, we selected Sm123 which has a higher peritectic temperature than Y123, and confirmed that Sm123 could be grown stably from the NiO saturated solution not only on MgO substrate but also Ni substrate. Because of its low Tc value of Sm123 grown from the NiO saturated solution, the (Y,Yb)123 layer was epitaxially grown as the superconductive layer on it from the solution without NiO
Keywords :
barium compounds; high-temperature superconductors; liquid phase epitaxial growth; nickel compounds; rare earth compounds; superconducting epitaxial layers; superconducting transition temperature; (Y,Yb)123 layer; Ba-Cu-Ni-O; LPE growth; MgO; MgO substrate; Ni; Ni substrate; NiO; NiO saturated solution; NiO/Ni substrate; RE123 crystals; Sm123; SmBa2Cu3O7; Tc; Y123; YBa2Cu3O7; YYbBa2Cu3O7; buffer layer; crystallization temperature; liquid phase epitaxy; peritectic temperature; superconductive layer; Buffer layers; Conducting materials; Crystallization; Crystals; Epitaxial growth; Optical microscopy; Powders; Substrates; Superconductivity; Temperature;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.919813
Filename :
919813
Link To Document :
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