Title :
`Zero¿ decay analogue store using guarded gate MOSFETs
Author :
Hart, B.L. ; Barker, R.W.J.
fDate :
3/1/1972 12:00:00 AM
Abstract :
An analogue store technique, which uses a guarded gate m.o.s.f.e.t. amplifier assembly and a novel bipolar transistor switching scheme, permits the simultaneous attainment of an acquisition time limited by amplifier slewing rate and a mean `hold¿ decay rate of only 170¿ V/s for a 10 pF storage capacitor.
Keywords :
analogue storage; field effect transistors; semiconductor storage devices; MOSFET amplifier; analogue store technique; bipolar transistor switching scheme; guarded gate;
Journal_Title :
Radio and Electronic Engineer
DOI :
10.1049/ree.1972.0020
