DocumentCode
147824
Title
Contents
fYear
2014
fDate
5-7 Aug. 2014
Abstract
The following topics are dealt with: low-temperature substrate bonding technology; microchannel cooled, high power GaN-on-diamond MMIC; pseudomorphic UV-C LEDs; advanced no-field-plate AlGaN/GaN HEMTs; graphene FETs; high-k dielectrics; highly integrated microfluidic cooling of high heat flux electronic components; wide and extreme bandgap semiconductor devices for power electronics applications; low-temperature hydrophobic wafer bonding for bi-directional Si UMOS IGBTs; applications for epitaxial lift-off of III-V materials; leakage current suppression in InGaAs-channel MOSFETs; GaN-HEMT technology; GaInN light-emitting diodes; terahertz lasing and detection in double-graphene-layer structures; and SnO2 colloidal nanoparticles based ultraviolet photodetector.
Keywords
III-V semiconductors; MMIC; MOSFET; aluminium compounds; colloids; cooling; diamond; field effect transistors; gallium arsenide; gallium compounds; graphene; high electron mobility transistors; high-k dielectric thin films; indium compounds; light emitting diodes; nanoparticles; photodetectors; power semiconductor devices; terahertz wave detectors; tin compounds; ultraviolet detectors; wafer bonding; wide band gap semiconductors; AlGaN-GaN; AlN; C; GaN-C; GaN-on-Diamond; HEMT; InGaAs; MMIC; Si; SnO2; graphene FET; high heat flux electronic components; high-k dielectrics; highly integrated microfluidic cooling; low-temperature substrate bonding technology; pseudomorphic UV-C LED;
fLanguage
English
Publisher
ieee
Conference_Titel
Lester Eastman Conference on High Performance Devices (LEC), 2014
Conference_Location
Ithaca, NY
Type
conf
DOI
10.1109/LEC.2014.6951554
Filename
6951554
Link To Document