Title :
8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 mu m recessed-gate AlGaAs/GaAs HEMTs
Author :
Hurm, V. ; Rosenzweig, J. ; Ludwig, M. ; Benz, W. ; Berroth, M. ; Huelsmann, A. ; Kaufel, G. ; Koehler, K. ; Raynor, B. ; Schneider, I.
Author_Institution :
Fraunhofer-Inst. fuer Angewandte Festkoerphys., Freiburg, Germany
fDate :
4/25/1991 12:00:00 AM
Abstract :
An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpedance amplifier, and a 50 Omega output buffer has been fabricated using an enhancement/depletion 0.5 mu m recessed-gate AlGaAs/GaAs HEMT process. Successful operation at data rates up to 10 Gbit/s has been demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; photodiodes; receivers; 0.5 micron; 10 Gbit/s; 50 Omega output buffer; 50 ohm; 8.2 GHz; AlGaAs-GaAs; MSM photodiode; OEIC; data rates; enhancement/depletion HEMTs; monolithic optoelectronic receiver; operation; optical receivers; recessed gate HEMTs; semiconductors; transimpedance amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910456
