• DocumentCode
    147828
  • Title

    S2-T1: GaN-on-diamond: A brief history

  • Author

    Ejeckam, F. ; Francis, Daniel ; Faili, F. ; Twitchen, Daniel ; Bolliger, Bruce ; Babic, Dubravko ; Felbinger, Jonathan

  • Author_Institution
    Element Six Technol., US Corp., Santa Clara, CA, USA
  • fYear
    2014
  • fDate
    5-7 Aug. 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper chronicles the historical technical development of Gallium Nitride-on-Diamond wafers and transistor devices by the authors starting from 2003 until the current status in 2014. This paper is not exhaustive in scope; selected accounts have been omitted either inadvertently or to maintain brevity.
  • Keywords
    III-V semiconductors; diamond; gallium compounds; high electron mobility transistors; semiconductor technology; wide band gap semiconductors; GaN-C; HEMT; gallium nitride-on-diamond transistor devices; gallium nitride-on-diamond wafers; historical technical development; Diamonds; Gallium nitride; HEMTs; MODFETs; Radio frequency; Silicon; Substrates; GaN-on-Diamond; GaN-on-SiC; HEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lester Eastman Conference on High Performance Devices (LEC), 2014
  • Conference_Location
    Ithaca, NY
  • Type

    conf

  • DOI
    10.1109/LEC.2014.6951556
  • Filename
    6951556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=147828