DocumentCode :
1478351
Title :
Experimental method for the determination of the energy distribution of stress-induced oxide traps
Author :
Spinelli, Alessandro S. ; Lacaita, Andrea L. ; Rigamonti, Matteo ; Ghidini, Gabriella
Author_Institution :
Dipt. di Sci. Chimiche, Fisiche e Matematiche, Univ. degli Studi dell´´Insubria, Como, Italy
Volume :
20
Issue :
3
fYear :
1999
fDate :
3/1/1999 12:00:00 AM
Firstpage :
106
Lastpage :
108
Abstract :
An experimental procedure for the determination of the energy distribution of oxide neutral traps is presented, showing the evolution of the stress-induced damage as a function of Fowler-Nordheim stress fluence and field. It is shown that the traps are mainly distributed around 2 eV from the oxide conduction band. Results are presented for different oxide technologies, investigating the effect of oxide nitridation and growth conditions on the trap energy distribution.
Keywords :
ULSI; electron traps; insulating thin films; integrated circuit reliability; integrated circuit testing; nitridation; tunnelling; Fowler-Nordheim stress fluence; IC reliability; ULSI; gate oxides; growth conditions; neutral traps; oxide nitridation; oxide technologies; stress-induced oxide traps; trap energy distribution; Current measurement; Degradation; Electric breakdown; Electron traps; Energy measurement; Fault location; Filling; Stress; Ultra large scale integration;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.748903
Filename :
748903
Link To Document :
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