Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well

Author

Xu, D. ; Osaka, J. ; Umeda, Y. ; Suemitsu, T. ; Yamane, Y. ; Ishii, Y.

Author_Institution

NTT Syst. Electron. Labs., Kanagawa, Japan

Volume

20

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

109

Lastpage

112

Abstract

We show that the channel thickness of modulation-doped field-effect transistors (MODFETs) based on an InAlAs/InGaAs heterojunction can be reduced from 15 to 8 nm without any degradation of the main DC and RF figures of merits. Furthermore, short-channel effects, which are pronounced in sub-0.1-μm devices, can be effectively suppressed by this thin-channel design. The retainment of high performance and alleviation of short-channel effects are attributed to the excellent two-dimensional electron gas (2-DEG) confinement by the inserted InAs layer. The successful channel thinning opens up the possibility of employing high-quality thin-channel structures for MODFETs with gate lengths below 0.05 μm.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; quantum well devices; DC figure of merit; InAlAs/InGaAs heterojunction; InGaAs-InAs-InGaAs; InGaAs/InAs/InGaAs quantum well; MODFET; RF figure of merit; channel thinning; modulation doped field effect transistor; short channel effect; two-dimensional electron gas; Degradation; Electrons; Epitaxial layers; FETs; HEMTs; Heterojunctions; Indium compounds; Indium gallium arsenide; MODFETs; Radio frequency;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.748904

Filename

748904