Planarized copper gate hydrogenated amorphous-silicon thin-film transistors for AM-LCDs

Author

Lan, Je-Hsiung ; Kanicki, Jerzy

Author_Institution

Center for Display Technol. & Manuf., Michigan Univ., Ann Arbor, MI, USA

Volume

20

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

129

Lastpage

131

Abstract

We report the first fabrication of inverted-staggered back-channel-etch hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with a planarized Cu gate electrode. The Cu gate-planarized (GP) a-Si:H TFTs, incorporating benzocyclobutene and a-SiN/sub x/:H as a double-layer gate insulator, had a field-effect mobility of 0.75 cm/sup 2//V-s, a threshold voltage of 4.92 V, and a subthreshold swing (S) of 0.48 V/dec. These results demonstrate that the GP-TFTs can have an electrical performance comparable with the conventional TFTs without gate planarization. Thus, the gate planarization technology is suitable for application in large-area and high-resolution active-matrix liquid-crystal displays.

Keywords

amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; insulating thin films; liquid crystal displays; thin film transistors; 4.92 V; AM-LCDs; double-layer gate insulator; field-effect mobility; inverted-staggered back-channel-etch transistors; planarized gate electrode; subthreshold swing; thin-film transistors; threshold voltage; Chemical technology; Conductivity; Copper; Electrodes; Fabrication; Glass; Insulation; Planarization; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.748910

Filename

748910