A new model for the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

Author

Ang, D.S. ; Ling, C.H.

Author_Institution

Fac. of Eng., Nat. Univ. of Singapore, Singapore

Volume

20

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

135

Lastpage

137

Abstract

A new insight into the post-stress interface trap (N/sub it/) generation in hot-electron stressed p-MOSFETs is presented. N/sub it/ generation is suppressed for positive oxide field but enhanced for negative oxide field. This observation provides strong support for a two-carrier model, involving the recombination between trapped electrons and inversion holes. While post-stress interface instability has generally been associated with hole trapping and hydrogen transport, our results clearly show the importance of electron traps on the long term stability of the Si-SiO/sub 2/ interface, and that the two-carrier model provides a consistent explanation for post-stress N/sub it/ generation in p-MOSFETs stressed under hot-electron injection.

Keywords

MOSFET; electron traps; electron-hole recombination; hot carriers; interface states; semiconductor device models; Si-SiO/sub 2/; electrical stress; electron trap; electron-hole recombination; hot electron injection; interface trap generation; p-MOSFET; stability; two-carrier model; Charge carrier processes; Degradation; Electron traps; Hot carriers; Hydrogen; MOSFET circuits; Pulse measurements; Spontaneous emission; Stability; Stress;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.748912

Filename

748912