Amorphous-silicon thin-film transistor with liquid phase deposition of silicon dioxide gate insulator

Author

Yeh, Jiun-lin ; Lee, Si-Chen

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

20

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

138

Lastpage

139

Abstract

The liquid phase deposition of silicon dioxide (LPD-SiO/sub 2/) at 50/spl deg/C has been successfully applied as the gate insulator for inverted, staggered amorphous silicon thin-film transistors (TFTs). The maximum field-effect mobility of the TFTs, estimated from the saturation region, was 0.53 cm/sup 2//V-s, comparable to that obtained for conventional, silicon nitride (SiN/sub x/) gate transistors. The threshold voltage and subthreshold swing were 6.2 V and 0.76 V/decade, respectively. Interface and bulk characteristics are as good as those obtained for silicon nitride (SiN/sub x/) films deposited by plasma enhanced chemical vapor deposition.

Keywords

amorphous semiconductors; elemental semiconductors; liquid phase deposition; silicon; silicon compounds; thin film transistors; 50 C; Si-SiO/sub 2/; amorphous silicon thin film transistor; field effect mobility; liquid phase deposition; silicon dioxide gate insulator; subthreshold swing; threshold voltage; Amorphous silicon; Dielectric liquids; FETs; Insulation; Plasma chemistry; Plasma properties; Semiconductor films; Silicon compounds; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.748913

Filename

748913