Author :
Aubry, Raphael ; Michel, N. ; Jacquet, J.C. ; Baczkowski, Leny ; Patard, O. ; Chartier, E. ; Lancereau, D. ; Bohbot, S. ; Di Forte Poisson, M.A. ; Oualli, M. ; Piotrowicz, S. ; Delage, S.L. ; Djouadi, A. ; Scudeller, Y. ; Ait-Aissa, K. ; Calus, J. ; Kohn,
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Keywords :
III-V semiconductors; aluminium compounds; coatings; gallium compounds; high electron mobility transistors; thin films; wide band gap semiconductors; AlN coatings; GaN-AlN; GaN-based HEMT; secondary passivation; thermal performances; thermal resistance; thin-film coatings; Coatings; HEMTs; III-V semiconductor materials; Logic gates; MODFETs; Passivation; Silicon compounds; AlN coatings; GaN; HEMTs; Thermal Management;
