DocumentCode
147851
Title
S4-P1: Wide and extreme bandgap semiconductor devices for power electronics applications
Author
Chow, T.P.
Author_Institution
Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2014
fDate
5-7 Aug. 2014
Firstpage
1
Lastpage
4
Abstract
The present status of the research, development and commercialization of wide (SiC, GaN) and extreme (diamond, AlN) bandgap semiconductor devices for power electronics applications is presented. The technology obstacles and needs as well as future trend in these power devices are also discussed.
Keywords
III-V semiconductors; gallium compounds; power semiconductor devices; silicon compounds; wide band gap semiconductors; GaN; SiC; extreme bandgap semiconductor devices; power electronics applications; wide bandgap semiconductor devices; Diamonds; Gallium nitride; HEMTs; MODFETs; Rectifiers; Silicon; Silicon carbide; 2H-GaN; 4H-SiC; AlN; diamond; power rectifiers; power transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lester Eastman Conference on High Performance Devices (LEC), 2014
Conference_Location
Ithaca, NY
Type
conf
DOI
10.1109/LEC.2014.6951567
Filename
6951567
Link To Document