S4-P7: Low-temperature hydrophobic wafer bonding for 1200V, 25A bi-directional Si UMOS IGBTs

Author

Wu, J.-W. ; Chowdhury, Shuvro ; Naik, H. ; Picard, J. ; Lee, Namyoon ; Hitchcock, C. ; Lu, James Jian-Qiang ; Chow, T.P.

Author_Institution

Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst. Troy, Troy, NY, USA

fYear

2014

fDate

5-7 Aug. 2014

Firstpage

1

Lastpage

4

Abstract

A 1200V, 25A bi-directional silicon UMOS-IGBT has been successfully fabricated and characterized using a hydrophobic bonding process at low temperature (400°C) for the first time. The static and dynamic performance of our previous bi-directional DMOS-IGBT using a new developed bonding approach with glass carrier wafers are also shown in this paper as a comparison.

Keywords

elemental semiconductors; hydrophobicity; insulated gate bipolar transistors; silicon; wafer bonding; Si; bidirectional DMOS-IGBT; bidirectional silicon UMOS-IGBT; current 25 A; dynamic performance; glass carrier wafers; insulated gate bipolar transistor; low-temperature hydrophobic wafer bonding; static performance; temperature 400 degC; voltage 1200 V; Bidirectional control; Bonding; Insulated gate bipolar transistors; Switches; Temperature; Temperature measurement; Wafer bonding; Bi-directional insulated gate bipolar transistor (BD-IGBT); dual gate; silicon wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lester Eastman Conference on High Performance Devices (LEC), 2014

Conference_Location

Ithaca, NY

Type

conf

DOI

10.1109/LEC.2014.6951568

Filename

6951568