Title :
S5-H7: GaN-HEMT technology for high power millimeter-wave amplifier
Author :
Makiyama, Kozo ; Ozaki, S. ; Okamoto, N. ; Ohki, T. ; Niida, Yoshitaka ; Kamada, Yoichi ; Joshin, Kazukiyo ; Watanabe, K.
Author_Institution :
Fujitsu Labs. Ltd. Atsugi, Fujitsu Ltd., Atsugi, Japan
Abstract :
In this work, we developed (1) an offset-overhanging Y-shaped gate structure to reduce the electric field at gate-edge, and demonstrated (2) low current collapse of InGaN back barrier structure that improved off-state breakdown voltage. In addition, we adopted (3) an InAlN electron-supplying layer to enhance the drain current. The fabricated InAlN/GaN HEMTs with 80-nm gates showed a high off-state breakdown of 73 V, a high drain current of 1.2 A/mm and a high Pout density of 1 W/mm at 90 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave power amplifiers; semiconductor device breakdown; wide band gap semiconductors; AlGaN-GaN; GaN-HEMT technology; InAlN-GaN; InGaN back barrier structure; drain current; electric field; electron-supplying layer; frequency 90 GHz; high power millimeter-wave amplifier; off-state breakdown voltage; offset-overhanging Y-shaped gate structure; size 80 nm; voltage 73 V; Aluminum gallium nitride; Electric fields; Electron traps; Gallium nitride; Logic gates; Millimeter wave communication; AlGaN; Amplifier; Current Collapse; GaN-HEMT; InAlN; Millimeter-wave; Reliability;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2014
Conference_Location :
Ithaca, NY
DOI :
10.1109/LEC.2014.6951571
