DocumentCode
1478703
Title
Write Activity Minimization for Nonvolatile Main Memory Via Scheduling and Recomputation
Author
Hu, Jingtong ; Tseng, Wei-Che ; Xue, Chun Jason ; Zhuge, Qingfeng ; Zhao, Yingchao ; Sha, Edwin H -M
Author_Institution
Dept. of Comput. Sci., Univ. of Texas at Dallas, Richardson, TX, USA
Volume
30
Issue
4
fYear
2011
fDate
4/1/2011 12:00:00 AM
Firstpage
584
Lastpage
592
Abstract
Nonvolatile memories such as Flash memory, phase change memory (PCM), and magnetic random access memory (MRAM) have many desirable characteristics for embedded systems to employ them as main memory. However, there are two common challenges we need to answer before we can apply nonvolatile memory as main memory practically. First, nonvolatile memory has limited write/erase cycles compared to DRAM. Second, a write operation is slower than a read operation on nonvolatile memory. These two challenges can be answered by reducing the number of write activities on nonvolatile main memory. In this paper, we proposed two optimization techniques, write-aware scheduling and recomputation, to minimize write activities on nonvolatile memory. With the proposed techniques, we can both speed up the completion time of programs and extend nonvolatile memory´s lifetime. The experimental results show that the proposed techniques can reduce the number of write activities on nonvolatile memory by 55.71% on average. Thus, the lifetime of nonvolatile memory is extended to 2.5 times as long as before on average. The completion time of programs can be reduced by 56.67% on systems with NOR Flash memory and by 47.63% on systems with NAND Flash memory on average.
Keywords
MRAM devices; embedded systems; flash memories; processor scheduling; DRAM; MRAM; NAND Flash memory; PCM; embedded systems; flash memory; magnetic random access memory; nonvolatile main memory; phase change memory; write activity minimization; Embedded systems; Flash memory; Nonvolatile memory; Optimal scheduling; Random access memory; Schedules; System-on-a-chip; Data recomputation; MRAM; SPM; flash memory; nonvolatile memory; phase change memory; scheduling;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2010.2097307
Filename
5737850
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