On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs

Author

Dai, Chih-Hao ; Chang, Ting-Chang ; Chu, Ann-Kuo ; Kuo, Yuan-Jui ; Chen, Shih-Ching ; Tsai, Chih-Chung ; Ho, Szu-Han ; Lo, Wen-Hung ; Xia, Guangrui ; Cheng, Osbert ; Huang, Cheng Tung

Author_Institution

Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

Volume

31

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

540

Lastpage

542

Abstract

This letter systematically investigates the mechanism of gate-induced floating-body effect (GIFBE) in advanced partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Based on different operation conditions, we found that the hole current collected by the body terminal is strongly dependent on electrons in the inversion layer under a source/drain ground. This implies that GIFBE can be attributed to anode hole injection (AHI) rather than the widely accepted mechanism of electron valence band tunneling. Moreover, GIFBE was also analyzed as a function of temperature. The results provide further evidence that the accumulation of holes in the body results from the AHI-induced direct tunneling current from the gate.

Keywords

MOSFET; elemental semiconductors; silicon; silicon-on-insulator; tunnelling; valence bands; AHI-induced direct tunneling current; PD SOI n-MOSFET; Si; anode hole injection; electron valence band tunneling; field- effect transistors; gate-induced floating-body effect; hole current; hole valence band injection; inversion layer; partially depleted silicon-on-insulator metal-oxide-semiconductor FET; source-drain ground; Electron-valence band (EVB) tunneling; gate-induced floating-body effect (GIFBE); linear kink effect; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2046131

Filename

5454259