DocumentCode :
1478816
Title :
Physical Features of the Barrier-Controlled Blocking Function of the Static Induction Thyristor
Author :
Li, Hairong ; Li, Siyuan
Author_Institution :
Inst. of Microelectron., Lanzhou Univ., Lanzhou, China
Volume :
58
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
1149
Lastpage :
1157
Abstract :
The physical features of the barrier-controlled blocking function of static induction thyristors (SITHs) are elaborated in detail from a new point of view. The correlative subjects are experimentally studied. The geometrical structure, the fabrication technology, the biasing conditions, the I -V characteristic, the conception, and the definition of the channel pinchoff of the SITH are discussed. Emphases are on the new ideas of the channel-barrier formation, the features of the channel barrier, the relationship between the barrier and the geometrical structure, and the biasing conditions. The physical mechanisms of the capability of blocking the current and bearing a high voltage are analyzed in depth.
Keywords :
power semiconductor switches; static induction transistors; thyristors; I-V characteristic; barrier-controlled blocking function; channel pinchoff; channel-barrier formation; power semiconductor switch; static induction thyristor; Anodes; Cathodes; Electric potential; Fabrication; Junctions; Logic gates; Thyristors; Power semiconductor switches; semiconductor devices; thyristors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2103363
Filename :
5737869
Link To Document :
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