Title :
Production of double-sided large-area high-Tc wafers by molecular beam epitaxy
Author :
Naito, M. ; Karimoto, S. ; Yamamoto, H. ; Nakad, H. ; Suzuki, K.
Author_Institution :
NTT Basic Res. Labs., Kanagawa, Japan
fDate :
3/1/2001 12:00:00 AM
Abstract :
We describe the growth and properties of high-Tc films by molecular beam epitaxy (MBE). MBE growth of high-Tc films requires a reliable rate control for individual elements and a strong activated oxygen source. By satisfying these two requirements, we have succeeded in growing high-quality Dy-123 films. In addition, we have achieved double-sided deposition on large-area substrates (so far up to 35 mm square). Films on MgO substrates typically show Tc(end)> 90 K, ρ(300 K)<300 μΩcm, Jc ~2-5×106 A/cm2 at 77 K, Rs for 123 films obtained at present by other growth methods
Keywords :
barium compounds; critical current density (superconductivity); dysprosium compounds; high-temperature superconductors; molecular beam epitaxial growth; superconducting epitaxial layers; superconducting transition temperature; 77 K; DyBa2Cu3O; MgO; MgO substrates; critical current density; double-sided deposition; double-sided large-area wafers; large-area substrates; molecular beam epitaxy; transition temperature; Electron beams; High temperature superconductors; Laboratories; Molecular beam epitaxial growth; Production; Pulsed laser deposition; Research and development; Substrates; Superconducting films; Superconductivity;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
