Title :
Effect of Optical Phonon Scattering on the Performance of GaN Transistors
Author :
Fang, Tian ; Wang, Ronghua ; Xing, Huili ; Rajan, Siddharth ; Jena, Debdeep
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
fDate :
5/1/2012 12:00:00 AM
Abstract :
A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high-speed behavior of short-gate-length GaN transistors. The model is able to resolve these peculiarities and provides a simple way to explain transistor behavior in any semiconductor material system in which electron-optical-phonon scattering is strong.
Keywords :
high electron mobility transistors; electron optical phonon scattering; high-speed transistor behavior; semiconductor material system; short gate length transistors; transconductance; Gallium nitride; HEMTs; Logic gates; Optical scattering; Phonons; ${f}_{T}$; high-electron-mobility transistor (HEMT); optical phonons; saturation current; scattering; transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2187169
