• DocumentCode
    1478944
  • Title

    Effect of Optical Phonon Scattering on the Performance of GaN Transistors

  • Author

    Fang, Tian ; Wang, Ronghua ; Xing, Huili ; Rajan, Siddharth ; Jena, Debdeep

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
  • Volume
    33
  • Issue
    5
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    709
  • Lastpage
    711
  • Abstract
    A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high-speed behavior of short-gate-length GaN transistors. The model is able to resolve these peculiarities and provides a simple way to explain transistor behavior in any semiconductor material system in which electron-optical-phonon scattering is strong.
  • Keywords
    high electron mobility transistors; electron optical phonon scattering; high-speed transistor behavior; semiconductor material system; short gate length transistors; transconductance; Gallium nitride; HEMTs; Logic gates; Optical scattering; Phonons; ${f}_{T}$; high-electron-mobility transistor (HEMT); optical phonons; saturation current; scattering; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2187169
  • Filename
    6175101
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1478944