DocumentCode :
1479103
Title :
Millimeter-Wave Self-Healing Power Amplifier With Adaptive Amplitude and Phase Linearization in 65-nm CMOS
Author :
Liu, Jenny Yi-Chun ; Berenguer, Roc ; Chang, Mau-Chung Frank
Author_Institution :
Dept. of Electr. Eng., Univ. of California at Los Angeles (UCLA), Los Angeles, CA, USA
Volume :
60
Issue :
5
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
1342
Lastpage :
1352
Abstract :
A self-healing two-stage millimeter-wave broadband power amplifier (PA) with on-chip amplitude/phase compensation is realized in 65-nm CMOS. The amplitude and phase compensations are accomplished by using feedback bias/capacitive schemes to extend the linear operation region and optimize the PA efficiency. Tunable control knobs are inserted in the linearization block to enhance the PA performance yield against process/temperature variations and device ageing effects. This prototype shows a 5.5-dB improvement of the output 1-dB compression point (P1dB) and a less than 2% chip-to-chip gain variation. At a 1-V supply, the differential PA achieves a saturation output power (Psat) of 14.85 dBm with a peak power-added-efficiency (PAE) of 16.2%. With the amplitude compensation, P1dB is increased to 13.7 dBm. With the phase compensation, the output phase variation is decreased to less than 0.5°. To the best of our knowledge, this prototype provides the highest Psat and P1dB with simultaneously high PAE from a single PA reported to date. The PA delivers a linear gain of 9.7 dB and has a 7-GHz 3-dB bandwidth from 55.5 to 62.5 GHz with a compact total area of 0.042 mm2.
Keywords :
CMOS analogue integrated circuits; circuit feedback; compensation; integrated circuit yield; linearisation techniques; millimetre wave power amplifiers; wideband amplifiers; CMOS; PA efficiency; PA performance yield; PAE; adaptive amplitude; bandwidth 55.5 GHz to 62.5 GHz; chip-to-chip gain variation; device ageing effect; differential PA; feedback bias/capacitive scheme; frequency 7 GHz; gain 9.7 dB; linear operation region; linearization block; on-chip amplitude/phase compensation; phase linearization; power-added-efficiency; process variation; saturation output power; self-healing two-stage millimeter-wave broadband power amplifier; size 65 nm; temperature variation; tunable control knob; voltage 1 V; CMOS integrated circuits; Capacitance; Gain; Logic gates; MOSFETs; Power generation; $V$-band; CMOS; millimeter-wave integrated circuits; power amplifier (PA); transformers;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2012.2189119
Filename :
6175127
Link To Document :
بازگشت