DocumentCode :
1479203
Title :
Correlation between impact ionisation, recombination and visible light emission in GaAs MESFETs
Author :
Zanoni, Enrico ; Bigliardi, S. ; Manfredi, Marco ; Paccagnella, Alessandro ; Pisconi, P. ; Tedesco, C. ; Canali, Carlo
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
Volume :
27
Issue :
9
fYear :
1991
fDate :
4/25/1991 12:00:00 AM
Firstpage :
770
Lastpage :
772
Abstract :
It is shown that the dominant emission mechanism of photons with high energy hv>Eg in GaAs MESFETs is the recombination of channel electrons with holes generated by impact ionisation. Accordingly, the intensity of emitted visible light is proportional to the product of the electron and hole currents and therefore to recombination rate.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electroluminescence; electron-hole recombination; gallium arsenide; impact ionisation; GaAs; MESFETs; channel electrons; hole currents; hv>E g; impact ionisation; recombination rate; visible light emission;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910479
Filename :
74912
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1479203
بازگشت