• DocumentCode
    1479203
  • Title

    Correlation between impact ionisation, recombination and visible light emission in GaAs MESFETs

  • Author

    Zanoni, Enrico ; Bigliardi, S. ; Manfredi, Marco ; Paccagnella, Alessandro ; Pisconi, P. ; Tedesco, C. ; Canali, Carlo

  • Author_Institution
    Dipartimento di Elettronica e Inf., Padova Univ., Italy
  • Volume
    27
  • Issue
    9
  • fYear
    1991
  • fDate
    4/25/1991 12:00:00 AM
  • Firstpage
    770
  • Lastpage
    772
  • Abstract
    It is shown that the dominant emission mechanism of photons with high energy hv>Eg in GaAs MESFETs is the recombination of channel electrons with holes generated by impact ionisation. Accordingly, the intensity of emitted visible light is proportional to the product of the electron and hole currents and therefore to recombination rate.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electroluminescence; electron-hole recombination; gallium arsenide; impact ionisation; GaAs; MESFETs; channel electrons; hole currents; hv>E g; impact ionisation; recombination rate; visible light emission;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910479
  • Filename
    74912
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1479203