Switching characteristics and maximum repetitive frequency of InGaAsP/InP bistable injection lasers

Author

Liu, Hai-Feng ; Hashimoto, Yoshio ; Kamiya, Takeshi

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

Volume

24

Issue

1

fYear

1988

Firstpage

43

Lastpage

51

Abstract

Switching characteristics of nonuniformly pumped InGaAsP/InP buried-heterostructure bistable lasers are investigated both experimentally and theoretically. The automatic turn-on phenomenon, which is a random process, was observed. For repetitive operation, turn-on delay time and the necessary duration of the switch-off pulse practically limited the maximum repetitive frequency. For switch-on, triggering the saturable absorption region is more effective. For reducing the minimum switch-off pulse width, either higher doping of reverse biasing at the absorption region is recommended. The tradeoff of OFF pulse width with threshold current, and stable operation are discussed. With some improvements in device parameters, bistable operation at a repetitive frequency over 1 GHz is expected.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical bistability; semiconductor junction lasers; InGaAsP-InP bistable injection lasers; automatic turn-on phenomenon; maximum repetitive frequency; nonuniformly pumped lasers; saturable absorption region; semiconductor; stable operation; switch-off pulse width; switching characteristics; Absorption; Delay effects; Doping; Frequency; Indium phosphide; Laser excitation; Laser theory; Pump lasers; Random processes; Space vector pulse width modulation;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.92

Filename

92