• DocumentCode
    1479502
  • Title

    Electrical effects of SiNx deposition on GaN MESFETs

  • Author

    Boudart, B. ; Gaquière, C. ; Guhel, Y. ; de Jaeger, J.C. ; Poisson, M.A.

  • Author_Institution
    CNRS, Villeneuve, France
  • Volume
    37
  • Issue
    8
  • fYear
    2001
  • fDate
    4/12/2001 12:00:00 AM
  • Firstpage
    527
  • Lastpage
    528
  • Abstract
    The electrical effects of SiNx deposition on GaN MESFETs have been investigated. Significant effects induced from the dielectric coating have been observed depending on the deposition temperature used in the technological process. A power density increase of 30% has been observed after the device passivation performed at 200°C
  • Keywords
    III-V semiconductors; gallium compounds; leakage currents; microwave field effect transistors; passivation; plasma CVD; power MESFET; silicon compounds; wide band gap semiconductors; 200 C; GaN; I-V characteristics; MESFET; SiN; SiNx deposition; deposition temperature dependence; device passivation; dielectric coating; electrical effects; leakage current; plasma-enhanced CVD; power density increase; static drain current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010324
  • Filename
    920002
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1479502