GaN/AlGaN HEMTs operating at 20 GHz with continuous-wave power density >6 W/mm

Author

Moon, J.S. ; Micovic, M. ; Janke, P. ; Hashimoto, P. ; Wong, W.-S. ; Widman, R.D. ; McCray, L. ; Kurdoghlian, A. ; Nguyen, C.

Author_Institution

HRL Labs., LLC, Malibu, CA, USA

Volume

37

Issue

8

fYear

2001

fDate

4/12/2001 12:00:00 AM

Firstpage

528

Lastpage

530

Abstract

MBE-grown GaN/AlGaN HEMTs have been fabricated on a 2° SiC wafer, where the source-drain spacing was 2 μm and the gate length was 0.15 μm. A peak extrinsic transconductance of 350 mS/mm and a maximum drain current density greater than 1.5 A/mm were obtained. Small-signal S-parameter measurement showed f_r of 85 GHz and f_MAN approaching 140 GHz. At 20 GHz, a continuous-wave output power density of 6.6 W/mm was obtained with power-added-efficiency of 35%, yielding the highest reported power performance at 20 GHz

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power HEMT; semiconductor growth; wide band gap semiconductors; 20 GHz; 350 mS/mm; GaN-AlGaN; I-V characteristics; K-band; MBE-grown; RF-assisted plasma MBE; continuous-wave power density; maximum drain current density; microwave HEMT; microwave power performance; peak extrinsic transconductance; power-added-efficiency; small-signal S-parameters;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010370

Filename

920003