DocumentCode :
1479513
Title :
Gunn instabilities in power HEMTs
Author :
Dunn, G.M. ; Phillips, A. ; Topham, P.J.
Author_Institution :
Sch. of Phys., Aberdeen Univ., UK
Volume :
37
Issue :
8
fYear :
2001
fDate :
4/12/2001 12:00:00 AM
Firstpage :
530
Lastpage :
531
Abstract :
Experimental and theoretical evidence of the formation of `transverse´ Gunn dipoles in an Al0.23Ga0.77As/In 0.23Ga0.77As delta doped HEMT is presented. Monte Carlo simulations predicted that the dipoles would first cause a sudden reduction in current followed by a gradual upturn. These predictions were in excellent agreement with the experimental observations
Keywords :
Gunn effect; III-V semiconductors; Monte Carlo methods; aluminium compounds; current fluctuations; gallium arsenide; impact ionisation; indium compounds; power HEMT; semiconductor device breakdown; semiconductor device models; Al0.23Ga0.77As-In0.23Ga0.77 As; Gunn instabilities; Monte Carlo simulations; delta doped HEMT; impact ionisation; power HEMT; pseudomorphic HEMT; sudden current reduction; transverse Gunn dipoles;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010362
Filename :
920004
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1479513
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