Title :
High performance C plus Al co-implanted 5000 V 4H-SiC P+iN diode
Author :
Alexandrov, P. ; Tone, K. ; Luo, Y. ; Zhao, J.H. ; Burke, T. ; Pan, M. ; Weiner, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
4/12/2001 12:00:00 AM
Abstract :
Planar C plus Al co-implanted 5000 V PiN diodes with an effective multistep junction termination extension were designed, modelled and fabricated. The diode I-V characteristics measured at different temperatures along with the multistep junction extension termination design dimensions are reported, showing the realisation of a near-perfect edge termination and a record high current density for the 29.33 μm 1×1015 cm-3 doped n- 4H-SiC drift layer used in this study
Keywords :
current density; ion implantation; p-i-n diodes; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 4H-SiC P+iN diode; C/Al co-implanted; I-V characteristics; SiC:C,Al; drift layer; high current density; high performance; multistep junction termination extension; near-perfect edge termination; planar PiN diodes; rectifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010322
