• DocumentCode
    1479526
  • Title

    High performance C plus Al co-implanted 5000 V 4H-SiC P+iN diode

  • Author

    Alexandrov, P. ; Tone, K. ; Luo, Y. ; Zhao, J.H. ; Burke, T. ; Pan, M. ; Weiner, M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
  • Volume
    37
  • Issue
    8
  • fYear
    2001
  • fDate
    4/12/2001 12:00:00 AM
  • Firstpage
    531
  • Lastpage
    533
  • Abstract
    Planar C plus Al co-implanted 5000 V PiN diodes with an effective multistep junction termination extension were designed, modelled and fabricated. The diode I-V characteristics measured at different temperatures along with the multistep junction extension termination design dimensions are reported, showing the realisation of a near-perfect edge termination and a record high current density for the 29.33 μm 1×1015 cm-3 doped n- 4H-SiC drift layer used in this study
  • Keywords
    current density; ion implantation; p-i-n diodes; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 4H-SiC P+iN diode; C/Al co-implanted; I-V characteristics; SiC:C,Al; drift layer; high current density; high performance; multistep junction termination extension; near-perfect edge termination; planar PiN diodes; rectifiers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010322
  • Filename
    920005
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1479526