Title :
Optimisation for improved short-channel performance of surrounding/cylindrical gate MOSFETs
Author :
Kranti, A. ; Rashmi ; Haldar, S. ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Delhi Univ., India
fDate :
4/12/2001 12:00:00 AM
Abstract :
A new technique is proposed to optimise the device parameters of a thin-film fully depleted SGT MOSFET to minimise short-channel effects. The model offers new opportunities for realising future ULSI circuits with SGTs
Keywords :
MOSFET; thin film transistors; ULSI circuit; cylindrical gate transistor; design optimisation; short channel effect; surrounding gate transistor; thin-film fully depleted SGT MOSFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010340
