DocumentCode :
1479548
Title :
Nonvolatile Memristive Switching Characteristics of TiO 
Films Embedded With Nickel Nanocrystals
Author :
Panda, Debashis ; Dhar, Achintya ; Ray, Samit K.
Author_Institution :
Dept. of Phys. & Meteorol., Indian Inst. of Technol., Kharagpur, India
Volume :
11
Issue :
1
fYear :
2012
Firstpage :
51
Lastpage :
55
Abstract :
Nickel nanocrystal (Ni-NC)-embedded titanium dioxide films have been deposited for nonvolatile resistive switching memory devices. The polycrystalline behavior of the films has been observed from the X-ray diffraction spectra. Tiny isolated Ni-NCs with an average size of 4 nm are observed for the 1000 °C, 5-min annealed samples. Stable, bipolar, nonvolatile, and bistable resistive switching states are observed for the optimized annealed Ni-NC-embedded devices with a low SET and RESET voltage of 0.8 and -0.2 V, respectively. A high resistance ratio (>;10), good stability, and retention properties are observed for the nanocrystal sample. The role of thin Ni-NC layer on memory switching stability is discussed.
Keywords :
X-ray diffraction; annealing; nanofabrication; nanostructured materials; nickel; thin films; titanium compounds; RESET voltage; TiO2-Ni; X-ray diffraction spectra; annealing process; nickel nanocrystal; nonvolatile resistive switching memory device; polycrystalline property; resistance ratio; resistive switching state; retention property; tiny isolation; titanium dioxide film deposition; Annealing; Films; Nanocrystals; Nickel; Nonvolatile memory; Resistance; Switches; Nonvolatile memory; TiO$_2$
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2011.2132142
Filename :
5738349
Link To Document :
