DocumentCode
1479584
Title
GaN-based SAW delay-line oscillator
Author
Ciplys, D. ; Rimeika, R. ; Sereika, A. ; Gaska, R. ; Shur, M.S. ; Yang, J.W. ; Khan, M.A.
Author_Institution
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
37
Issue
8
fYear
2001
fDate
4/12/2001 12:00:00 AM
Firstpage
545
Lastpage
546
Abstract
An SAW oscillator based on a GaN-sapphire acoustic delay line is reported. The oscillation frequency is determined by the GaN sound velocity and transducer period and is sensitive to temperature and to ultraviolet radiation. Our results show that GaN-based structures offer the possibility of integrating the acoustic and electronic elements on a single chip capable of operating at relatively high temperatures
Keywords
III-V semiconductors; gallium compounds; high-temperature electronics; piezoelectric semiconductors; surface acoustic wave delay lines; surface acoustic wave oscillators; ultraviolet radiation effects; wide band gap semiconductors; GaN; GaN-sapphire SAW delay-line oscillator; high temperature operation; single chip; sound velocity; transducer; ultraviolet radiation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010358
Filename
920014
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