Title :
GaN-based SAW delay-line oscillator
Author :
Ciplys, D. ; Rimeika, R. ; Sereika, A. ; Gaska, R. ; Shur, M.S. ; Yang, J.W. ; Khan, M.A.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
4/12/2001 12:00:00 AM
Abstract :
An SAW oscillator based on a GaN-sapphire acoustic delay line is reported. The oscillation frequency is determined by the GaN sound velocity and transducer period and is sensitive to temperature and to ultraviolet radiation. Our results show that GaN-based structures offer the possibility of integrating the acoustic and electronic elements on a single chip capable of operating at relatively high temperatures
Keywords :
III-V semiconductors; gallium compounds; high-temperature electronics; piezoelectric semiconductors; surface acoustic wave delay lines; surface acoustic wave oscillators; ultraviolet radiation effects; wide band gap semiconductors; GaN; GaN-sapphire SAW delay-line oscillator; high temperature operation; single chip; sound velocity; transducer; ultraviolet radiation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010358
