• DocumentCode
    1479822
  • Title

    9.5 W CW output power from high brightness 980 nm InGaAs/AlGaAs tapered laser arrays

  • Author

    Wilson, F.J. ; Lewandowski, J.J. ; Nayar, B.K. ; Robbins, D.J. ; Williams, P.J. ; Carr, N. ; Robson, F.O.

  • Author_Institution
    GEC-Marconi Mater. Technol. Ltd., Towcester, UK
  • Volume
    35
  • Issue
    1
  • fYear
    1999
  • fDate
    1/7/1999 12:00:00 AM
  • Firstpage
    43
  • Lastpage
    45
  • Abstract
    High power 980 nm InGaAs/AlGaAs lasers consisting of an array of closely-spaced tapered waveguides, giving low beam divergence and hence high brightness, have been fabricated. The lateral beam divergence is in the range 6-8° (full-width at 1/e2) for all output powers. The vertical beam divergence, which is defined by the layer structure, is 44° (full-width at 1/e2). CW output powers of 9.5 W and a catastrophic optical mirror damage limit in excess of 170 mW/μm-facet have been demonstrated
  • Keywords
    III-V semiconductors; aluminium compounds; brightness; gallium arsenide; indium compounds; semiconductor laser arrays; waveguide lasers; 9.5 W; 980 nm; CW output power; InGaAs-AlGaAs; InGaAs/AlGaAs tapered laser array; beam divergence; brightness; catastrophic optical mirror damage; waveguide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990064
  • Filename
    749211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1479822