Title :
Investigation of data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates
Author :
Uenohara, H. ; Tateno, K. ; Kagawa, T. ; Ohiso, Y. ; Tsuda, H. ; Kurokawa, T. ; Amano, C.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
1/7/1999 12:00:00 AM
Abstract :
The data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated
Keywords :
III-V semiconductors; gallium arsenide; laser frequency stability; light polarisation; optical transmitters; semiconductor lasers; surface emitting lasers; 850 nm; BER; GaAs; bias current; data transmission characteristics; polarisation resolved systems; polarisation stability; polarisation unresolved systems; polarisation-controlled VCSELs; power penalty;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990034
