DocumentCode
1479830
Title
Investigation of data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates
Author
Uenohara, H. ; Tateno, K. ; Kagawa, T. ; Ohiso, Y. ; Tsuda, H. ; Kurokawa, T. ; Amano, C.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
35
Issue
1
fYear
1999
fDate
1/7/1999 12:00:00 AM
Firstpage
45
Lastpage
46
Abstract
The data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated
Keywords
III-V semiconductors; gallium arsenide; laser frequency stability; light polarisation; optical transmitters; semiconductor lasers; surface emitting lasers; 850 nm; BER; GaAs; bias current; data transmission characteristics; polarisation resolved systems; polarisation stability; polarisation unresolved systems; polarisation-controlled VCSELs; power penalty;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990034
Filename
749212
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