Title :
Lumped DC-50 GHz amplifier using InP/InGaAs HBTs
Author :
Huber, A. ; Huber, D. ; Bergamaschi, C. ; Morf, T. ; Jackel, H.
Author_Institution :
Electron. Lab., Fed. Inst. of Technol., Zurich, Switzerland
fDate :
1/7/1999 12:00:00 AM
Abstract :
A direct-coupled, lumped broadband amplifier utilising InP/InGaAs single heterojunction bipolar transistors (SHBTs) is presented. The achieved -3 dB bandwidth is 50 GHz with a DC gain of 9.8 dB and a gain peak of only 1.2 dB. This is the largest bandwidth reported for InP/InGaAs HBT amplifiers with such a flat gain curve
Keywords :
DC amplifiers; III-V semiconductors; bipolar transistor circuits; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 50 GHz; 9.8 dB; DC gain; InP-InGaAs; InP/InGaAs single heterojunction bipolar transistor; bandwidth; direct coupled lumped broadband amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990003
