DocumentCode
1480020
Title
High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD
Author
Koester, S.J. ; Chu, J.O. ; Groves, R.A.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
35
Issue
1
fYear
1999
fDate
1/7/1999 12:00:00 AM
Firstpage
86
Lastpage
87
Abstract
The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length Lg=0.2 μm and drain-source separation L ds=0.9 μm displayed unity current gain cutoff frequencies as high as fT=45 GHz (47 GHz) at Vds=+0.6 V (+1.5 V). Similar devices with Lg=0.2 μm and Lds=0.5 μm produced values of fT=61 GHz (62 GHz) at Vds=+0.6 V (+1.0 V). The value fT=62 GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET
Keywords
Ge-Si alloys; chemical vapour deposition; elemental semiconductors; high electron mobility transistors; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; 0.2 micron; 0.6 to 1.5 V; 45 to 47 GHz; 61 to 62 GHz; Si-SiGe; UHV-CVD; drain-source separation; gate length; high-frequency results; n-channel MODFETs; strained layer heterostructures; unity current gain cutoff frequencies;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990075
Filename
749240
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