Title :
Ultralow dark current GaAlAs/GaAs MSM photodetector
Author :
Aboudou, A. ; Vilcot, J.P. ; Decoster, D. ; Chenoufi, A. ; Delhaye, E. ; Boissenot, P. ; Varin, C. ; Deschamps, F. ; Lecuru, I.
Author_Institution :
Centre Hyperfrequences et Semicond., CNRS, Univ. des Sci. et Tech. de Lille Flandre-Artois, Villeneuve D´´Ascq, France
fDate :
5/9/1991 12:00:00 AM
Abstract :
An interdigitated GaAlAs/GaAs metal-semiconductor-metal photodetector designed to be fully integrable with HIGFET-based digital integrated circuits and which exhibit a dark current as low as 100 pA at 10 V bias voltage is presented. Static and dynamic responsivities are reported, as well as noise properties. Photocurrents (for bias voltage higher than 4 V) comparable to those measured with a pin photodiode, and a shot noise cutoff frequency in excess of 13 GHz were recorded.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; metal-semiconductor-metal structures; photodetectors; semiconductor technology; 0 to 13 GHz; 13 GHz; GaAlAs-GaAs; MSM photodetector; bias voltage; dynamic responsivities; integrable with HIGFET-based digital integrated circuits; interdigitated photodetector; metal-semiconductor-metal photodetector; noise properties; semiconductors; shot noise cutoff frequency; static responsivities; ultralow dark current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910497
