Characterization of GaN HEMTs for integrated supply modulator

GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at very high frequencies due to the enhanced power handling capabilities provided by the SiC substrate and very high transition frequencies of GaN High Electron Mobility Transistors (HEMTs). This paper explores the use of RF GaN HEMTs as power switches in integrated supply modulator topologies. Devices were characterized for power switching and a simple figure of merit was calculated to understand the device performance in terms of its ON resistance and input capacitance.