Title :
A series of InGaP/InGaAs HBT oscillators up to D-band
Author :
Uchida, Kenji ; Matsuura, Hiroyuki ; Yakihara, Tsuyoshi ; Kobayashi, Shinji ; Oka, Sadaharu ; Fujita, Tadashige ; Miura, Akira
Author_Institution :
Res. & Dev. Dept. 1, Teratec Corp., Tokyo, Japan
fDate :
5/1/2001 12:00:00 AM
Abstract :
In this paper, the development of a series of fixed-frequency heterojunction bipolar transistor (HBT) oscillators from the W- to D-bands is reported. The oscillators are designed based on feedback theory with a small-signal equivalent circuit. This design method enables the achievement of high-output-power oscillators for the management of the power that is generated at the current source inside the HBT. We use a 1 μm×10 μm single-emitter InGaP/InGaAs HBT as an active device for each oscillator, and 50-Ω coplanar waveguides as transmission lines and resonators. Emitter output topology is adopted to reduce the chip size. The series of oscillators achieve the oscillation frequency of 74.8-146.7 GHz. To our knowledge, the 146.7-GHz fundamental oscillation frequency is the highest oscillation frequency achieved thus far using InGaP/InGaAs HBT technology. The output power of the 146.7-GHz oscillator is -18.4 dBm. The chip size of the oscillator is 731 μm×411 μm
Keywords :
III-V semiconductors; bipolar transistor circuits; equivalent circuits; feedback oscillators; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; millimetre wave oscillators; 74.8 to 146.7 GHz; D-band; InGaP-InGaAs; InGaP/InGaAs heterojunction bipolar transistor; W-band; active device; circuit feedback; coplanar waveguide; millimeter-wave oscillator; small-signal equivalent circuit; Coplanar waveguides; Design methodology; Energy management; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Oscillators; Power generation; Power transmission lines;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
