DocumentCode :
1480467
Title :
A Compact, Low-Power 40-GBit/s Modulator Driver With 6-V Differential Output Swing in 0.25- 
m SiGe BiCMOS
Author :
Knochenhauer, Christian ; Scheytt, J. Christoph ; Ellinger, Frank
Author_Institution :
Dept. of Circuit Design & Network Theor., Tech. Univ. Dresden, Dresden, Germany
Volume :
46
Issue :
5
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
1137
Lastpage :
1146
Abstract :
This paper presents a high-speed, low-power modulator driver featuring a novel modified breakdown voltage doubler (BVD) topology. Further speed enhancement and reduction of power consumption is achieved by multiple frequency compensation methods. An optimization method combining small and large-signal analyses is presented. The driver was fabricated in a 0.25-μm SiGe BiCMOS technology with fT of up to 180 GHz. It features 13-dB differential gain, a small-signal bandwidth of 33.7 GHz and delivers a single-ended output swing of 3 Vpp (6 Vpp differential) at 40 GBit/s into a 50-Ω load consuming only 1.35 W of DC power.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; driver circuits; modulators; optimisation; SiGe; SiGe BiCMOS technology; bit rate 40 Gbit/s; breakdown voltage doubler topology; compact modulator driver; differential output swing; high-speed modulator driver; low-power modulator driver; optimization method; power consumption; resistance 50 ohm; voltage 6 V; Bandwidth; Capacitance; Driver circuits; Modulation; Resistance; Topology; Transistors; BiCMOS; breakdown voltage doubler; modulator driver; opto-electronic integrated circuit;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2011.2111090
Filename :
5738697
Link To Document :
