Title :
Flexible X-Ray Detector Array Fabricated With Oxide Thin-Film Transistors
Author :
Lujan, R.A. ; Street, R.A.
Author_Institution :
Palo Alto Res. Center, Palo Alto, CA, USA
fDate :
5/1/2012 12:00:00 AM
Abstract :
A flat-panel flexible X-ray image sensor fabricated with oxide thin-film transistors (TFTs) is described. Bottom-gate GaInZnO TFTs are fabricated on a plastic substrate and integrated with amorphous silicon p-i-n photodiodes, with a maximum process temperature of 170°C . X-ray images obtained with a 160 × 180 pixel array in the indirect detection mode are reported.
Keywords :
X-ray detection; X-ray imaging; gallium compounds; image sensors; indium compounds; p-i-n photodiodes; thin film transistors; zinc compounds; GaInZnO; amorphous silicon p-i-n photodiodes; bottom-gate GaInZnO TFT; flat-panel flexible X-ray image sensor; flexible X-ray detector array; oxide thin-film transistors; plastic substrate; temperature 170 C; Arrays; Backplanes; Photodiodes; Substrates; Thin film transistors; X-ray imaging; Oxide semiconductor; X-ray detector; thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2188825
