Title :
Using cold FET to check accuracy of microwave noise parameter test set
Author :
Escotte, L. ; Plana, R. ; Rayssac, J. ; Llopis, O. ; Graffeuil, J.
Author_Institution :
LAAS-CNRS, Toulouse, France
fDate :
5/9/1991 12:00:00 AM
Abstract :
To check the accuracy of the measurements of microwave noise parameters, verification techniques are needed. A common-gate cold FET is proposed as a noise verification standard which presents the advantage of good availability and insertability in the same test jig as employed for packaged active devices. In addition the noise parameters of a common-gate cold FET are of the same order of magnitude as the active device ones. The presented experimental data show an accuracy better than 0.1 dB on the minimum noise figure measurement.
Keywords :
calibration; electric noise measurement; field effect transistors; measurement standards; microwave measurement; semiconductor device testing; solid-state microwave devices; common-gate cold FET; microwave noise parameter test set; minimum noise figure measurement; noise verification standard; test set accuracy checking;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910522