• DocumentCode
    1480727
  • Title

    Neutron-Induced Upsets in NAND Floating Gate Memories

  • Author

    Gerardin, Simone ; Bagatin, Marta ; Ferrario, Alberto ; Paccagnella, Alessandro ; Visconti, Angelo ; Beltrami, Silvia ; Andreani, Carla ; Gorini, Giuseppe ; Frost, Christopher D.

  • Author_Institution
    Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy
  • Volume
    12
  • Issue
    2
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    437
  • Lastpage
    444
  • Abstract
    We investigate atmospheric neutron effects on floating-gate cells in NAND Flash memory devices. Charge loss is shown to occur, particularly at the highest program levels, causing raw bit errors in multilevel cell NAND, but to an extent that does not challenge current mandatory error correction specifications. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size.
  • Keywords
    flash memories; logic gates; sensitivity; NAND flash memory device; atmospheric neutron effects; floating-gate cells; mandatory error correction specification; multilevel cell NAND; neutron-induced upset; physical mechanisms; sensitivity; Bit error rate; Error correction codes; Flash memory; Materials; Neutrons; Nonvolatile memory; Threshold voltage; Flash memories; floating gate; neutrons; soft errors;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2012.2192440
  • Filename
    6176212
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1480727