Title :
1.3 mu m InGaAsP ridge waveguide laser on GaAs and silicon substrates by thin film transfer
Author :
Shieh, C.L. ; Chi, J.Y. ; Armiento, C.A. ; Haugsjaa, P.O. ; Negri, A. ; Wang, W.I.
Author_Institution :
GTE Labs. Inc., Waltham, MA, USA
fDate :
5/9/1991 12:00:00 AM
Abstract :
A new thin-film transfer technique has been developed that eliminates the handling of fragile, free-standing films. This, process was used to demonstrate the first long wavelength laser fabricated on a host substrate by a thin-film transfer technique. Ridge waveguide lasers operating at a wavelength of 1.3 mu m were fabricated on both GaAs and silicon substrates. The light-current characteristics of these transferred lasers were comparable to conventional lasers.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser transitions; optical waveguides; optical workshop techniques; semiconductor junction lasers; 1.3 micron; GaAs substrate; InGaAsP-GaAs; InGaAsP-Si; OEIC; Si substrate; host substrate; long wavelength laser; ridge waveguide laser; semiconductor lasers; thin film transfer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910532
