Design and Modeling Methodology of Vertical Interconnects for 3DI Applications

Author

Gordin, Rachel ; Goren, David ; Shlafman, Shlomo ; Elad, Danny ; Scheuermann, Michael ; Young, Albert ; Liu, Fei ; Gu, Xiaoxiong ; Tyberg, Christy

Author_Institution

IBM Haifa Res. Lab., Haifa, Israel

Volume

1

Issue

2

fYear

2011

Firstpage

163

Lastpage

167

Abstract

This paper presents a design and modeling methodology of vertical interconnects for three-dimensional integration (3DI) applications. Compact semi-analytical wideband circuit level models have been developed based on explicit expressions. The pronounced frequency dependent silicon substrate induced dispersion and loss effects are considered, as well as skin and proximity effects. The models have been verified against numerical computations (full wave HFSS and quasi-static Q3D solvers). A dedicated test site has been designed for broadband characterization (from 1 MHz up to 110 GHz) of TSVs within a dense farm.

Keywords

elemental semiconductors; integrated circuit interconnections; integration; silicon; three-dimensional integrated circuits; 3DI application; Si; TSV broadband characterization; compact semi-analytical wideband circuit level model; dense farm; loss effect; pronounced frequency dependent silicon substrate induced dispersion; skin effect; three-dimensional integration application; vertical interconnects; Capacitance; Frequency dependence; Integrated circuit interconnections; Integrated circuit modeling; Silicon; Substrates; Through-silicon vias; Compact models; dispersion effect; frequency dependence; interconnect; three-dimensional integration (3DI); through-silicon via (TSV);

fLanguage

English

Journal_Title

Components, Packaging and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-3950

Type

jour

DOI

10.1109/TCPMT.2010.2101751

Filename

5739018